상세정보
학술지
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
- 발행일
- 200707
- 출처
- Applied Physics Letters, v.91 no.1, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 07ZB1200, 정보통신미래신기술연구사업, 정태형
- 초록
- The authors investigate the electrical and structural properties of high- k Er-silicate film formed by the interfacial reaction between Er and Si O2 films. The increase in rapid thermal annealing temperature leads to the reduction of the interface trap density by one order of magnitude, indicating the improvement in the interface quality of Er-silicate gate dielectric. The increased capacitance value of Er-silicate gate dielectric with thermal treatment is attributed in part to the reduction of Si O2 thickness and to the increase in the relative dielectric constant of Er-silicate film caused by the chemical bonding change from Si-rich to Er-rich silicate. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Capacitance value, Chemical bonding, Electrical and structural properties, High-K, Interfacial reaction, Relative dielectric constant, Silicate film, Thermal annealing temperature, Thermal treatments, gate dielectric, interface quality