상세정보
학술지
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
- 저자
- 이상준, 이준오, 노삼규, 이규석
- 발행일
- 200709
- 출처
- Journal of the Korean Physical Society, v.51 no.3, pp.1027-1031
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 06IB1800, 고효율 대면적 Blue LED Chip개발, 이규석
- 초록
- We have investigated the photoluminescence (PL) emission characteristics of self-assembled In-GaN/GaN quantum dot (QD) structures grown by using the plasma-assisted molecular beam epitaxy technique with an atomic nitrogen plasma source. The low-temperature PL spectrum (15 K) exhibits, due to the InGaN QD, a strong emission at 3.268 eV, accompanied by two longitudinal optical (LO) phonon replicas with an equal energy spacing of 93 meV, in the lower energy region. The PL peak intensities for the QDs gradually decrease and become relatively weaker compared to those for the GaN epilayer due to carrier thermalization in the QDs. The temperature dependences of the PL peaks for the GaN epilayer and the InGaN QDs in the range of 15 - 300 K, follow very well the Varshni relation, and the LO phonon energy has almost no temperature dependence, (93 + 3) meV, below a quenching temperature of ~100 K.
- KSP 제안 키워드
- GaN epilayer, InGaN QDs, Longitudinal optical (LO) phonon, Low temperature(LT), Molecular beam epitaxy(MBE), Nitrogen plasma, PL spectrum, Peak intensity, Phonon energy, Phonon replicas, Photoluminescence (PL) emission