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Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
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- Authors
- S. J. Lee, J. O. Kim, S. K. Noh, K.-S. Lee
- Issue Date
- 2007-09
- Citation
- Journal of the Korean Physical Society, v.51, no.3, pp.1027-1031
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the photoluminescence (PL) emission characteristics of self-assembled In-GaN/GaN quantum dot (QD) structures grown by using the plasma-assisted molecular beam epitaxy technique with an atomic nitrogen plasma source. The low-temperature PL spectrum (15 K) exhibits, due to the InGaN QD, a strong emission at 3.268 eV, accompanied by two longitudinal optical (LO) phonon replicas with an equal energy spacing of 93 meV, in the lower energy region. The PL peak intensities for the QDs gradually decrease and become relatively weaker compared to those for the GaN epilayer due to carrier thermalization in the QDs. The temperature dependences of the PL peaks for the GaN epilayer and the InGaN QDs in the range of 15 - 300 K, follow very well the Varshni relation, and the LO phonon energy has almost no temperature dependence, (93 + 3) meV, below a quenching temperature of ~100 K.