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Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD
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- Issue Date
- 2007-09
- Citation
- ECS Transactions, v.11, no.7, pp.245-248
- ISSN
- 1938-5862
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- Ge2Sb2Te5 (GST), the key phase change material in PRAM (Phase-change Random Access Memory) is accompanied by volume- and stress-changes during its crystallization This suggests that the changes may induce reliability issues of PRAM. In this work, the stress is reduced by half by capping GST with Al2O3 film. To maintain amorphous-GST state of as-fabricated samples, GST was sputtered at room temperature and Al2O3 was grown by PEALD (Plasma Enhanced Atomic Layer Deposition) method at 120°C To accomplish GST crystallization, heat treatment was conducted. After the heat treatment, radius changes were measured using thin film stress measurement system and stress changes were calculated using the Stoney equation © The Electrochemical Society.
- KSP Keywords
- Film stress measurement, Phase Change Material(PCM), Phase-change random access memory(PRAM), Plasma-enhanced atomic layer deposition, Room-temperature, Stoney equation, heat treatment, measurement system, stress reduction, thin film(TF), thin film stress