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Statistical analysis of electronic properties of alkanethiols in metal–molecule–metal junctions
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- Authors
- Tae-Wook Kim, Gun Uk Wang, Hyo Young Lee, Tak Hee Lee
- Issue Date
- 2007-07
- Citation
- Nanotechnology, v.18, no.31, pp.1-8
- ISSN
- 0957-4484
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated 13 440 molecular electronic devices using different lengths of alkanethiol self-assembled monolayers and performed statistical analyses on the histograms of the electronic transport properties of the alkanethiols. The statistical analysis provides criteria for defining 'working' molecular electronic devices and selecting 'representative' devices. The yield of the working alkanethiol devices was found to be ~1.2% (156 out of 13 440 devices) and average transport parameters such as current density, transport barrier height, effective electron mass and tunnelling decay coefficient were obtained from the statistically defined working molecular electronic devices. From the length-dependent tunnelling and temperature-variable current-voltage characteristics of the working devices, the alkanethiol molecular devices showed typical tunnelling transport. However, the statistical consideration for determining working molecular devices should be carried out prior to these characterizations or detailed analysis on them. © IOP Publishing Ltd.
- KSP Keywords
- Alkanethiol self-assembled monolayers, Decay coefficient, Effective electron mass, Electronic properties, Electronic transport properties, I-V characteristic(Transport property), Molecular electronic devices, Statistical Analysis, Statistical analyses, Transport barrier, Transport parameters