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Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
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- Authors
- An Soon Kim, Chil Seong Ah, Han Young Yu, Jong-Heon Yang, In-Bok Baek, Chang-Guen Ahn, Chan Woo Park, Myung Sim Jun, Sung Jae Lee
- Issue Date
- 2007-09
- Citation
- Applied Physics Letters, v.91, no.10, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n -type silicon nanowire-based structures configured as field-effect transistors using the conventional "top-down" semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fgml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor. © 2007 American Institute of Physics.
- KSP Keywords
- Conductivity change, Covalent linkage, Doping concentration, Electric Field, Field Effect Transistor(FET), Isoelectric point, Label-free, PH values, Real-Time detection, Semiconductor process, Si surface