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학술지 Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
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저자
김안순, 아칠성, 유한영, 양종헌, 백인복, 안창근, 박찬우, 전명심, 이성재
발행일
200709
출처
Applied Physics Letters, v.91 no.10, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2779965
협약과제
07MB2700, 유비쿼터스 건강관리용 모듈 시스템, 박선희
초록
Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n -type silicon nanowire-based structures configured as field-effect transistors using the conventional "top-down" semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fgml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor. © 2007 American Institute of Physics.
KSP 제안 키워드
Conductivity change, Covalent linkage, Doping concentration, Field-effect transistors(FETs), Isoelectric point(IEP), Label-Free, N-type, PH values, Semiconductor process, Si surface, Silicon nanowires(SiNWs)