상세정보
학술지
Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
- 발행일
- 200709
- 출처
- Applied Physics Letters, v.91 no.10, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 07MB2700, 유비쿼터스 건강관리용 모듈 시스템, 박선희
- 초록
- Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n -type silicon nanowire-based structures configured as field-effect transistors using the conventional "top-down" semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fgml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Conductivity change, Covalent linkage, Doping concentration, Field-effect transistors(FETs), Isoelectric point(IEP), Label-Free, N-type, PH values, Semiconductor process, Si surface, Silicon nanowires(SiNWs)