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Journal Article
Photo-assisted Electrical Gating in a Two-terminal Device based on Vanadium Dioxide Thin Film
- Authors
- Yong Wook Lee, Bong-Jun Kim, Sung Youl Choi, Hyun-Tak Kim, Gyung Ock Kim
- Issue Date
- 2007-09
- Citation
- Optics Express, v.15, no.19, pp.12108-12113
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified. ©2007 Optical Society of America.
- KSP Keywords
- Electrical devices, Light-induced, Phase transition, Photo-assisted, Two-terminal device, Vanadium dioxide thin film, electrical gating, infrared light, light intensity, thin film(TF), three-terminal device
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
