ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Photo-assisted Electrical Gating in a Two-terminal Device based on Vanadium Dioxide Thin Film
Cited 35 time in scopus Download 8 time Share share facebook twitter linkedin kakaostory
Authors
Yong Wook Lee, Bong-Jun Kim, Sung Youl Choi, Hyun-Tak Kim, Gyung Ock Kim
Issue Date
2007-09
Citation
Optics Express, v.15, no.19, pp.12108-12113
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.15.012108
Abstract
For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified. ©2007 Optical Society of America.
KSP Keywords
Electrical devices, Light-induced, Phase transition, Photo-assisted, Two-terminal device, Vanadium dioxide thin film, electrical gating, infrared light, light intensity, thin film(TF), three-terminal device
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
CC BY