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Stress Reduction During Phase Change in Ge2Sb2Te5 by Capping TiN Film
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- Authors
- Young Sam Park, Sang Ouk Ryu, Kyu Jeong Choi, Seung Yun Lee, Sung Min Yoon, Byoung Gon Yu
- Issue Date
- 2007-10
- Citation
- Journal of Materials Science : Materials in Electronics, v.18, no.10, pp.1079-1082
- ISSN
- 0957-4522
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- It has been one of the most important issues to minimize the stress reduction during phase change in GST (Ge 2Sb 2 Te 5) alloy for PRAM (Phase-change Random Access Memory) applications, because the alloy has been reported to face the significant stress during the phase change. We fabricated GST/oxide/ substrate as a basic structure, and then added two more structures by capping an adhesion layer (Ti) or a barrier metal (TiN) on GST layer, respectively. We report that TiN-capped structure shows about 40% stress reduction during the phase change compared with that of the basic structure. The stress reduction is considered to be due to the intrinsic compressive stress in TiN film itself. © Springer Science+Business Media, LLC 2007.
- KSP Keywords
- Barrier Metal, Basic structure, Capped structure, Compressive stress, Phase-change random access memory(PRAM), TiN film, adhesion layer, stress reduction