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학술지
Fabrication and Atmospheric-Pressure-Dependent Electrical Properties of a ZnO Nanowire Device
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- 발행일
- 200710
- 출처
- Journal of the Korean Physical Society, v.51, pp.S170-S173
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 07MB2600, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- A single ZnO nanowire device was fabricated by electron-beam lithography, and its current-voltage characteristics were recorded while varying the atmospheric pressure to test possible applications as a chemical gas sensor. Vertically well aligned ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. Semiconducting nanowire devices were fabricated by using photolithography and e-beam lithography, and their electrical properties were studied. To realize reliable device operation, which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact-resistance problem by using a scanning probe microscopic tool to characterize surface-potential behaviors. To overcome the contact-resistance problem, a post thermal process was adapted to the nanowire device. Atmospheric-pressure-dependent electrical properties of the ZnO nanowire device were studied for chemical-sensor application.
- KSP 제안 키워드
- Au thin film, Chemical gas sensor, Contact resistance(73.40.Cg), E-beam Lithography, GaN epilayer, Key factor, Scanning probe, Semiconducting nanowire, Surface Potential, Thermal process, Vapor-liquid-solid (vls)