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Journal Article
Fabrication and Atmospheric-Pressure-Dependent Electrical Properties of a ZnO Nanowire Device
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- Authors
- E.-K. Kim, H.-Y. Lee, J. Park, S. J. Park, J. H. Kwak, S. E. Moon, S. Maeng, K.-H. Park, S.-W. Kim, H. J. Ji, G. T. Kim
- Issue Date
- 2007-10
- Citation
- Journal of the Korean Physical Society, v.51, pp.S170-S173
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- A single ZnO nanowire device was fabricated by electron-beam lithography, and its current-voltage characteristics were recorded while varying the atmospheric pressure to test possible applications as a chemical gas sensor. Vertically well aligned ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. Semiconducting nanowire devices were fabricated by using photolithography and e-beam lithography, and their electrical properties were studied. To realize reliable device operation, which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact-resistance problem by using a scanning probe microscopic tool to characterize surface-potential behaviors. To overcome the contact-resistance problem, a post thermal process was adapted to the nanowire device. Atmospheric-pressure-dependent electrical properties of the ZnO nanowire device were studied for chemical-sensor application.
- KSP Keywords
- Au thin film, Chemical gas sensor, Chemical sensors, Contact resistance(73.40.Cg), E-beam Lithography, GaN epilayer, Key factor, Scanning probe, Semiconducting nanowire, Surface Potential, Thermal process