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학술지 High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μ m Wavelength
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저자
송정호, 김기수, 임영안, 김경옥
발행일
200710
출처
IEEE Photonics Technology Letters, v.19 no.19, pp.1415-1417
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2007.902946
협약과제
06MB2800, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width at half-maximum), and a very small spectral modulation (0.7 dB) were achieved with a short length absorption region. © 2007 IEEE.
키워드
Broadband source, Quantum well, Selective area growth (SAG), Superluminescent diode (SLD)
KSP 제안 키워드
Broadband Source, Full-width at half-maximum(FWHM), High output power, High power, Quantum Well(QW), Selective area growth, Short-length, Single-mode waveguide, Spectral modulation, Superluminescent diodes(SLDs), spectral bandwidth