상세정보
학술지
High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μ m Wavelength
- 발행일
- 200710
- 출처
- IEEE Photonics Technology Letters, v.19 no.19, pp.1415-1417
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 06MB2800, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width at half-maximum), and a very small spectral modulation (0.7 dB) were achieved with a short length absorption region. © 2007 IEEE.
- KSP 제안 키워드
- Full-width at half-maximum(FWHM), High output power, High power, Selective area growth, Short-length, Single-mode waveguide, Spectral modulation, Superluminescent diodes(SLDs), spectral bandwidth