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Journal Article Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate
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Authors
Jung Wook Lim, Jae Bon Koo, Sun Jin Yun, Hyun-Tak Kim
Issue Date
2007-10
Citation
Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.2760321
Abstract
Pentacene organic thin-film transistors (OTFTs) were fabricated on a polyethersulfone (PES) substrate with an Al2 O3 gate dielectric grown at 150°C by plasma enhanced atomic layer deposition. Due to the roughness of the Al2 O3 surfaces, the OTFTs with Al2 O3 of 150 nm showed better performance compared to that with Al2 O3 of 120 nm. When OTFTs with a 150 nm thick Al2 O3 layer were fabricated on PES substrate, excellent electrical characteristics were obtained, including carrier mobility as large as 0.62 cm2 V s, a subthreshold slope as low as 0.4 V /dec, and on-off current ratio as large as 107. © 2007 The Electrochemical Society.
KSP Keywords
20 nm, Carrier mobility, ON/OFF current ratio, Organic thin-film transistors (otfts), Pentacene thin-film transistors, Plasma-enhanced atomic layer deposition, Plastic substrate, Subthreshold slope(SS), Thin-Film Transistor(TFT), electrical characteristics, gate dielectric