상세정보
학술지
Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate
- 발행일
- 200710
- 출처
- Electrochemical and Solid-State Letters, v.10 no.10, pp.J36-J38
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 초록
- Pentacene organic thin-film transistors (OTFTs) were fabricated on a polyethersulfone (PES) substrate with an Al2 O3 gate dielectric grown at 150°C by plasma enhanced atomic layer deposition. Due to the roughness of the Al2 O3 surfaces, the OTFTs with Al2 O3 of 150 nm showed better performance compared to that with Al2 O3 of 120 nm. When OTFTs with a 150 nm thick Al2 O3 layer were fabricated on PES substrate, excellent electrical characteristics were obtained, including carrier mobility as large as 0.62 cm2 V s, a subthreshold slope as low as 0.4 V /dec, and on-off current ratio as large as 107. © 2007 The Electrochemical Society.
- KSP 제안 키워드
- 20 nm, Carrier mobility, ON/OFF current ratio, Organic thin-film transistors (otfts), Pentacene thin-film transistors, Plasma-enhanced atomic layer deposition, Plastic substrate, Subthreshold slope(SS), Thin-Film Transistor(TFT), electrical characteristics, gate dielectric