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학술지 Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
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저자
이승윤, 윤성민, 최규정, 이남열, 박영삼, 류상욱, 유병곤, 김상훈, 이상흥
발행일
200710
출처
Applied Surface Science, v.254 no.1, pp.312-315
ISSN
0169-4332
출판사
Elsevier Science, Elsevier
DOI
https://dx.doi.org/10.1016/j.apsusc.2007.07.097
협약과제
06MB1200, 나노급 상변화 정보저장 기술, 유병곤
초록
The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures. © 2007 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Bottom electrode, Chalcogenide alloys, High Temperature, High resistivity, Highly doped, Joule Heating, N-type, Non-Volatile Memory(NVM), Petri net(PN), Phase transition, SiGe alloy