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학술대회 Design, Fabrication, and Characterization of a Readout Integrated Circuit (ROIC) for Capacitive MEMS Sensors
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이명래, 이성식, 정성혜, 제창한, 황건, 최창억
SENSORS 2007, pp.260-263
08MB1900, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
A novel readout integrated circuit (ROIC) with tunable sensitivity, variable resolution, and especially multiple and selectable input ranges is designed, fabricated, and characterized for various capacitive MEMS sensors. The ROIC was fabricated by using 0.35 μm 3.3 V CMOS process and consisted of a capacitance-to-time (C-T) converter, a high speed signal counter, a phase-locked loop (PLL), control logics and synchronous peripheral interfaces (SPI). By using SPI, the clock frequency (fCLK) of the ROIC can be changed from 10 MHz to 160 MHz, which results in resolutions up to 14 bit. The measured minimum detectable capacitance of the ROIC were 2.86 fF for fCLK = 10 MHz and 180 aF for fCLK = 160 MHz, which were equivalent to 9 bit and 14 bit resolutions, respectively. © 2007 IEEE.
KSP 제안 키워드
3 V, CMOS Process, Capacitive MEMS, Clock frequency, Computed tomography(C.T), High Speed, MEMS sensor, Phase locked loop(PLL), Readout integrated circuit, Variable resolution, tunable sensitivity