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Nonvolatile Programmable Metallization Cell Memory Switching Element based on Ag-doped SbTe Solid Electrolyte
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- Authors
- Young Sam Park, Seung Yun Lee, Sung Min Yoon, Soon Won Jung, Byoung Gon Yu, Soo Jin Lee, Soon Gil Yoon
- Issue Date
- 2007-10
- Citation
- Applied Physics Letters, v.91, no.16, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35 Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/ Si O2 Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35 Te65 film to form Ag-doped Sb35 Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag-Te bond in the solid electrolyte. © 2007 American Institute of Physics.
- KSP Keywords
- Ag diffusion, Ag-doped, Bottom electrode, Chalcogenide films, Diffusion process, Memory switching, Programmable metallization cell, Si substrate, Solid electrolyte, Switching device, Switching element