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학술지 Nonvolatile Programmable Metallization Cell Memory Switching Element based on Ag-doped SbTe Solid Electrolyte
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저자
박영삼, 이승윤, 윤성민, 정순원, 유병곤, 이수진, 윤순길
발행일
200710
출처
Applied Physics Letters, v.91 no.16, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2789663
초록
We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35 Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/ Si O2 Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35 Te65 film to form Ag-doped Sb35 Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag-Te bond in the solid electrolyte. © 2007 American Institute of Physics.
KSP 제안 키워드
Ag diffusion, Ag-doped, Bottom electrode, Chalcogenide films, Diffusion process, Memory switching, Programmable metallization cell, Si substrate, Solid electrolyte, Switching device, Switching element