상세정보
학술지
Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application
- 저자
- 이승윤, 정선, 윤성민, 박영삼
- 발행일
- 201106
- 출처
- Japanese Journal of Applied Physics, v.50 no.6 PART 2, pp.1-5
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- We present a novel concept for the formation of active phase change regions in nonvolatile memory. Nanoscale phase change materials were prepared in a self-aligned manner by intermixing of two different components chosen from Ge, SiGe, Sb, and SbTe. The interdiffusion of Ge and Sb atoms increased gradually with increasing annealing temperature to 500 °C, whereas Ge, Sb, and Te atoms were completely mixed at 300 °C or higher. In addition, we found that Ge and Sb elements disappeared at 600 °C, exceeding the eutectic point (592 °C) of GeSb. Transmission electron microscopy revealed that a GeSb layer about 20 nm thick formed at the interface between the Ge and Sb layers. The memory devices fabricated based on the concept exhibited reduced programming currents, which is attributed to the small-sized phase change material made using the self-aligned formation. © 2011 The Japan Society of Applied Physics.
- KSP 제안 키워드
- 20 nm, Active Phase, Annealing temperature, Applied physics, Different components, Memory applications, Non-Volatile Memory(NVM), Phase Change Material(PCM), Self-aligned formation, Small-sized, Transmission Electron Microscopy(TEM)