상세정보
학술지
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
- 발행일
- 201104
- 출처
- Japanese Journal of Applied Physics, v.50 no.4 PART 2, pp.1-3
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 10MC2900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
- 초록
- Electrical properties of the Silicon quantum dots (Si-QD) light-emitting diodes (LEDs), in its dependence on the nitrogen source used in the silicon nitride (SiNx ) matrix growth, have been studied. Si-QDs are formed in-situ during the SiNx film growth, and no post-annealing process for crystallization was applied. To confirm the electrical properties of the Si-QD devices, we manufacture the Si-QD LED. Both p-type and p+-type Si substrate were tested in role of hole tunneling in the LED performance. The high-resolution transmission electron microscopy (HRTEM) analyses and the current-voltage (I-V) measurement show that the Si-QDs embedded in the SiN x grown with ammonia (NH3) are located at the interface between the SiNx film and the Si substrate. This is related to the observed increase in the forward current by considering a decrease in the hole tunneling barrier width between the Si substrate and the Si-QDs. © 2011 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Barrier width, Current-voltage, Forward current, In-Situ, Light-emitting diodes (leds), Nitrogen source, Post-annealing process, Quantum Dot(QD), Si QDs, Si substrate