상세정보
학술지
Photoreflectance Interference in Modulation-Doped AlGaAs/GaAs Single Heterojunctions
- 발행일
- 200711
- 출처
- Journal of the Korean Physical Society, v.51 no.5, pp.1821-1824
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 06IB1800, 고효율 대면적 Blue LED Chip개발, 이규석
- 초록
- We report on the photoreflectance (PR) interference in an n-modulation-doped AlGaAs/GaAs single heterojunction grown on a semi-insulating GaAs substrate. An oscillatory feature is observed in the spectral region below the bandgap of GaAs and is attributed to the interference of two light beams, one reflected from the AlGaAs/GaAs interface and the other from the upper boundary of the hole-accumulating GaAs. The modulation of the refractive index of GaAs at the hole-accumulation region with the modulation light beam gives rise to the interference effect. Analyzing theoretically the observed oscillatory feature with a single homo-interface model consisting of intrinsic GaAs and hole-accumulating GaAs, we determined the thickness of the intrinsic GaAs.
- KSP 제안 키워드
- Accumulation region, GaAs substrates, Interface model, Interference effects, Modulation-doped(MD), Single heterojunction, light beam, refractive index, semi-insulating GaAs