BROWSE
Detail
Journal Article
Photoreflectance Interference in Modulation-Doped AlGaAs/GaAs Single Heterojunctions
Cited 1 time in 
Share 
Share
- Authors
- Kyu-Seok Lee, W. S. Han, J. O. Kim, S. J. Lee, S. K. Noh
- Issue Date
- 2007-11
- Citation
- Journal of the Korean Physical Society, v.51, no.5, pp.1821-1824
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the photoreflectance (PR) interference in an n-modulation-doped AlGaAs/GaAs single heterojunction grown on a semi-insulating GaAs substrate. An oscillatory feature is observed in the spectral region below the bandgap of GaAs and is attributed to the interference of two light beams, one reflected from the AlGaAs/GaAs interface and the other from the upper boundary of the hole-accumulating GaAs. The modulation of the refractive index of GaAs at the hole-accumulation region with the modulation light beam gives rise to the interference effect. Analyzing theoretically the observed oscillatory feature with a single homo-interface model consisting of intrinsic GaAs and hole-accumulating GaAs, we determined the thickness of the intrinsic GaAs.
- KSP Keywords
- Accumulation region, GaAs substrate, Interference effect, Light beams, Modulation-doped(MD), Single heterojunction, interface model, refractive index, semi-insulating GaAs