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Conference Paper
X-Band 0.2 μm AlGaN/GaN MISFET with SiN-Assisted Double-Deck T-Shaped Gate Structure
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- Authors
- Ho-Kyun Ahn, Hae-Cheon Kim, Dong-Min Kang, Sung-Il Kim, Byoung-Gue Min, Hyoung-Sup Yoon, Jong-Won Lim, Yong-Hwan Kwon, Eun-Soo Nam
- Issue Date
- 2015-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Double-deck, T-shaped gate, x-band