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학술대회
The Effect of Annealing Treatment on Indium Oxide/Zinc Oxide Heterostructured Thin Films Transistors Grown by Plasma Enhanced Atomic Layer Deposition
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- 발행일
- 201512
- 출처
- International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
- 협약과제
- 15MB1600, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- KSP 제안 키워드
- Annealing Treatment, Plasma-enhanced atomic layer deposition, Thin films transistors, Zinc oxide(ZnO), effect of annealing, indium oxide, thin film(TF)