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Conference Paper
Pentacene Thin-film Transistors with Thin Polymer Gate Dielectric and Silver Electrode
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- Authors
- J. H. Kim, K. C. Song, K.-H. Beak, D. J. Kim, L. M. Do
- Issue Date
- 2007-12
- Citation
- International Display Workshops (IDW) 2007, pp.2005-2006
- Language
- English
- Type
- Conference Paper
- Abstract
- We report on organic transistors with a thin polymer gate dielectric driven with low-voltage. Using low cost processible metal electrodes such as aluminum gate and silver source/drain, 240 nm thin poly-4-vinylphenol (PVP) dielectric, and pentacene semiconductor, we obtained devices on glass with mobilities > 1cm 2 /Vs. As baking temperature of PVP dielectric is increased, the mobility of TFTs is improved.
- KSP Keywords
- 4-vinylphenol(Poly), 40 nm, Baking temperature, Low voltage, Low-cost, Pentacene thin-film transistors, Poly-4-vinylphenol, Silver electrode, Thin-Film Transistor(TFT), gate dielectric, metal electrode