상세정보
학술지
Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films
- 발행일
- 200709
- 출처
- Integrated Ferroelectrics, v.93 no.1, pp.75-82
- ISSN
- 1058-4587
- 출판사
- Taylor & Francis
- 초록
- To improve the memory characteristics of the device using Sb-rich Ge-Sb-Te alloys, especially the data endurance under repetitive rewriting cycles, a nm-thick Al2O3 was proposed as a barrier layer, because the inter-diffusion between top electrode contact (W) and phase-change material had been observed. It was confirmed that the memory device using a 4-nm-thick Al2O3 layer showed good programming behaviors and improved data endurance, compared with those of the device without any barrier layer and with a TiN.
- KSP 제안 키워드
- Barrier layers, Electrode contact, Ge-Sb-Te, Phase Change Material(PCM), inter-diffusion, memory characteristics, memory device, top electrode