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Journal Article
Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films
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- Authors
- Sung-Min Yoon, Kyu-Jeong Choi, Sang-Hee Ko Park, Seung-Yun Lee, Young-Sam Park, Byoung-Gon Yu
- Issue Date
- 2007-09
- Citation
- Integrated Ferroelectrics, v.93, no.1, pp.75-82
- ISSN
- 1058-4587
- Publisher
- Taylor & Francis
- Language
- English
- Type
- Journal Article
- Abstract
- To improve the memory characteristics of the device using Sb-rich Ge-Sb-Te alloys, especially the data endurance under repetitive rewriting cycles, a nm-thick Al2O3 was proposed as a barrier layer, because the inter-diffusion between top electrode contact (W) and phase-change material had been observed. It was confirmed that the memory device using a 4-nm-thick Al2O3 layer showed good programming behaviors and improved data endurance, compared with those of the device without any barrier layer and with a TiN.
- KSP Keywords
- Barrier layers, Electrode contact, Ge-Sb-Te, Phase Change Material(PCM), inter-diffusion, memory characteristics, memory device, top electrode