상세정보
학술지
Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories
- 발행일
- 200709
- 출처
- Integrated Ferroelectrics, v.93 no.1, pp.83-89
- ISSN
- 1058-4587
- 출판사
- Taylor & Francis
- 초록
- For the realization of reliable nonvolatile phase-change memory operations, it is very important to understand the long-term behaviors of memory states with different resistance values. We investigated the time-dependent behaviors of RESET resistance states (RR) for the fabricated memory devices using Sn-doped GST, in which Sn amounts were varied to control the initial values of RR. It was found that the transient variations of RR showed an increasing trend with time, and that their behaviors were closely related to the microstructure of amorphous phase in the phase-change material.
- KSP 제안 키워드
- Amorphous Phase, Initial value, Memory states, Non-Volatile Memory(NVM), Phase Change Material(PCM), Resistance change, Sn-doped, Time-dependent, memory device