상세정보
학술지
Light Response of Top Gate InGaZnO Thin Film Transistor
- 발행일
- 201103
- 출처
- Japanese Journal of Applied Physics, v.50 no.3S, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- The light stability of top gate indium gallium zinc oxide (IGZO) thin film transistor (TFT) has been investigated under gate bias and constant current stress to explore the possibility of active matrix display applications. While the halogen lamp irradiation onto the device under positive gate bias stress caused just -0:18 V of threshold voltage shift (?봙th), it resulted in -15:1 V shift under negative gate bias stress. When the white light extracted from the halogen lamp of 100 μW/cm2 power illuminated the device under constant current stress, operation voltage shifted just -0:05 V for 21 h. The result shows good promise for the application of highly stable IGZO TFT to active matrix organic light emitting diodes (AMOLEDs).
- KSP 제안 키워드
- 1 H, Constant current(CC), Constant current stress, Display applications, Gate bias stress, Highly stable, IGZO TFTs, Indium gallium zinc oxide, Organic light-emitting diodes(OLEDS), Thin-Film Transistor(TFT), Threshold voltage shift