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Journal Article
Light Response of Top Gate InGaZnO Thin Film Transistor
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- Authors
- Sang-Hee Ko Park, Minki Ryu, Sung Min Yoon, Shinhyuk Yang, Chi-Sun Hwang, Jae-Hong Jeon, Kyounghwan Kim
- Issue Date
- 2011-03
- Citation
- Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- The light stability of top gate indium gallium zinc oxide (IGZO) thin film transistor (TFT) has been investigated under gate bias and constant current stress to explore the possibility of active matrix display applications. While the halogen lamp irradiation onto the device under positive gate bias stress caused just -0:18 V of threshold voltage shift (?봙th), it resulted in -15:1 V shift under negative gate bias stress. When the white light extracted from the halogen lamp of 100 μW/cm2 power illuminated the device under constant current stress, operation voltage shifted just -0:05 V for 21 h. The result shows good promise for the application of highly stable IGZO TFT to active matrix organic light emitting diodes (AMOLEDs).
- KSP Keywords
- 1 H, Constant current(CC), Constant current stress, Display applications, Halogen lamp, Highly stable, IGZO TFTs, Indium Gallium Zinc Oxide(IGZO), Thin-Film Transistor(TFT), Threshold voltage shift, Zinc Oxide(ZnO)