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Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
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- Authors
- Won-Ju Cho, Chang-Geun Ahn
- Issue Date
- 2007-12
- Citation
- Journal of the Korean Physical Society, v.51, pp.S313-S317
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We present simulation results for Schottky junction diodes and Schottky barrier metal-oxidesemiconductor eld-eect transistors (SB-MOSFETs) for post-CMOS devices. By using an abrupt metal/silicon Schottky junction at the source/drain region, short-channel eects in nano-scale MOS-FET devices can be avoided. In particular, the eects of trap density at the metal silicide/silicon interface were simulated by taking into account the tail distributions at the silicon band-edge position and the Gaussian distributions at the silicon midgap position. As a result, it is found that the reduction of interfacial states with Gaussian distribution is more important than that of the tail distribution on Schottky junction diodes and SB-MOSFETs.
- KSP Keywords
- Barrier Metal, Edge position, FET devices, Gaussian Distribution, Interface trap distribution, Metal silicide, Metal-oxide-semiconductor field-effect transistor(MOSFET), Schottky Barrier MOSFET, Short channel, Silicon interface, interfacial states