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Journal Article Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
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Authors
Won-Ju Cho, Chang-Geun Ahn
Issue Date
2007-12
Citation
Journal of the Korean Physical Society, v.51, pp.S313-S317
ISSN
0374-4884
Publisher
한국물리학회 (KPS)
Language
English
Type
Journal Article
Project Code
07MB2700, Ubiquitous Health Monitoring Module and System Development, Park Seon Hee
KSP Keywords
Interface trap distribution, Metal silicide, Schottky Barrier MOSFET, Silicon interface