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Journal Article Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices

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Authors: Won-Ju Cho, Chang-Geun Ahn

Issue Date: 2007-12

Citation: Journal of the Korean Physical Society, v.51, pp.S313-S317

ISSN: 0374-4884

Publisher: 한국물리학회 (KPS)

Language: English

Type: Journal Article

Project Code: 07MB2700, Ubiquitous Health Monitoring Module and System Development, Park Seon Hee

KSP Keywords: Interface trap distribution, Metal silicide, Schottky Barrier MOSFET, Silicon interface

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