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Conference Paper Enhanced Pentacene OTFT Properties with Surface Treatment on PSPI Gate Dielectric
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Authors
Lee-Mi Do, Myung-Won Lee, Kyu-Ha Baek, Ki-Chul Song, Jun-Ho Kim, Do-Jin Kim, Ki-Jun Lee, Mi-Hye Yi
Issue Date
2007-12
Citation
International Display Workshops (IDW) 2007, pp.2013-2014
Language
English
Type
Conference Paper
Abstract
The pentacene organic thin field transistor (OTFT) with photosensitive polyimide (PSPI) gate dielectric was examined with various surface treatments. The mobility of OTFTs strongly depends on interface energy properties between gate dielectric and semiconductor layer. Although the OTFT mobility was decreased through PSPI gate dielectric patterning process, the mobility was improved from 0.11 cm 2 /Vs to 0.75 cm 2 /Vs by control of surface energy with UV ozone and hexamethyldisilazane (HMDS) treatment.
KSP Keywords
Patterning process, Photosensitive polyimide, Surface treatments, gate dielectric, interface energy, surface energy