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The Effect of Post-Annealing on Bias Stability of InOx/ZnO Superlattice Thin Film Transistors Grown by Plasma Enhanced Atomic Layer Deposition
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- 발행일
- 201509
- 출처
- Asian-European International Conference on Plasma Surface Engineering (AEPSE) 2015, pp.1-1
- 협약과제
- 15MB1600, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- KSP 제안 키워드
- Plasma-enhanced atomic layer deposition, Post-annealing, Thin-Film Transistor(TFT), bias stability, thin film(TF)