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Conference Paper High-Frequency Characteristics of 40Gb/s Electroabsorption Modulator-Integrated DFB Lasers: Effect of Traveling-Wave Electrode and Tilted Facet
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Authors
Yong-Hwan Kwon, Joong-Seon Choe, Jae-Sik Sim, Sung-Bock Kim, Hog Yeong Yun, Kwang-Seong Choi
Issue Date
2007-12
Citation
Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4
Publisher
IEEE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/APMC.2007.4554714
Abstract
We fabricated 40Gb/s electroabsorption modulatorintegrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3 dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB.
KSP Keywords
3-dB bandwidth, As 2, DFB laser, Dry etching processes, High Frequency(HF), High-frequency characteristics, Traveling-wave electrode, electroabsorption modulator(EAM), optical feedback