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학술지
Electrical Characteristics of Excimer-Laser-Annealed Poly-Si Thin-Film Transistors
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- 발행일
- 200712
- 출처
- Journal of the Korean Physical Society, v.51, pp.S241-S244
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 07MB2700, 유비쿼터스 건강관리용 모듈 시스템, 박선희
- 초록
- The electrical characteristics of a polycrystalline silicon (poly-Si) thin-film transistor (TFT) crystallized by a KrF excimer-laser-annealing (ELA) method were evaluated. The solid-phase crystallization (SPC) and sequential-lateral-solidification (SLS) methods were compared to the ELA method as a crystallization technique for amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by the ELA method were superior to those for the SPC or SLS methods. Also, we obtained excellent device characteristics from the poly-Si TFT fabricated by the ELA crystallization method.
- KSP 제안 키워드
- Crystallization technique, Device characteristics, Laser annealing, Poly-Si TFT, Polycrystalline silicon(poly-Si), Silicon film, Solid-phase crystallization(SPC), Surface roughness, Thin-Film Transistor(TFT), amorphous silicon, electrical characteristics