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Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
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- Authors
- Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Yong-Sik Lim
- Issue Date
- 2007-04
- Citation
- Journal of Crystal Growth, v.301-302, pp.252-255
- ISSN
- 0022-0248
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- An abrupt first-order metal-insulator transition (MIT) as a current jump is observed in Be-doped GaAs by inducing holes in a very low concentration of np ≈ 5 × 1014 cm- 3 into the valence band by the electric field; this is anomalous. In a higher hole-doping concentration of np ≈ 6 × 1016 cm- 3, the abrupt MIT is not observed at room temperature, but measured at a low temperature. The upper limit of the temperature allowing the MIT is deduced from experimental data to be approximately 440 K. The abrupt MIT is intrinsic and is compared with "breakdown" (an unsolved problem) produced by a high electric field in semiconductor devices. © 2006 Elsevier B.V. All rights reserved.
- KSP Keywords
- Doping concentration, Experimental Data, First order, High electric field, Low concentration, Low temperature(LT), Room-temperature, Upper limit, hole doping, metal-insulator transition, semiconductor device