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Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
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- Authors
- Myung Sim Jun, Moon Gyu Jang, Yark Yeon Kim, Chel Jong Choi, Seong Jae Lee
- Issue Date
- 2008-01
- Citation
- Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Project Code
- 07ZB1200, Future Technology Researches in the Fields of Informations and Telecommunications, Taehyoung Zyung
- Abstract
- We manufactured erbium-silicided Schottky diodes on n -type and p -type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from the current-voltage-temperature characteristics of the Schottky diodes in reverse-bias condition. The barrier heights were obtained as a function of temperature, decreasing with the decrease of temperature. Low effective barrier heights at low temperature may be due to the trap-assisted current at the erbium silicide/silicon Schottky junction. The temperature-independent barrier heights for electrons and holes were evaluated to be 0.39 and 0.69 eV, respectively, at high temperature by fitting the effective barrier heights as a function of temperature. In this case, the carrier conduction mechanism can be explained by the pure thermionic emission model. © 2008 American Vacuum Society.
- KSP Keywords
- Carrier conduction mechanism, Current-voltage, Erbium silicide, High Temperature, Low temperature(LT), N-type, Reverse bias, Schottky barrier height, Silicon substrate, Temperature-dependent, Thermionic emission model