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Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene
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- Authors
- Eun hee Lim, Byung-Jun Jung, Masayuki Chikamatsu, Reiko Azumi, Yuji Yoshida, Kiyoshi Yase, Lee-Mi Do, Hong-Ku Shim
- Issue Date
- 2007-01
- Citation
- Journal of Materials Chemistry, v.17, no.14, pp.1416-1420
- ISSN
- 0959-9428
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9??-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F
4 TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V -1 s-1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10-11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4 TCNQ complex, which results in better hole injection and improved device stability. © The Royal Society of Chemistry.
- KSP Keywords
- Doping effects, Electron acceptor, Hole mobility, Improved device stability, Off Current, Organic thin-film transistors (otfts), Solution-processed, TCNQ complex, Thin-Film Transistor(TFT), hole injection, hysteresis behavior