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학술지 Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene
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저자
임은희, 정병준, Masayuki Chikamatsu, Reiko Azumi, Yuji Yoshida, Kiyoshi Yase, 도이미, 심홍구
발행일
200701
출처
Journal of Materials Chemistry, v.17 no.14, pp.1416-1420
ISSN
0959-9428
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/b615720c
협약과제
07IB1100, OTFT 소자 신뢰성 향상 기술 개발, 도이미
초록
We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9??-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V -1 s-1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10-11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4TCNQ complex, which results in better hole injection and improved device stability. © The Royal Society of Chemistry.
KSP 제안 키워드
Doping effects, Electron acceptor, Hole mobility, Improved device stability, Off Current, Organic thin-film transistors (otfts), Solution-processed, TCNQ complex, Thin-Film Transistor(TFT), hole injection, hysteresis behavior