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Journal Article Ultrafast Photoluminescence Dynamics of Nitride-passivated Silicon Nanocrystals using the Variable Stripe Length Technique
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Authors
Hui Chen, Jung H. Shin, Philippe M. Fauchet, Joo-Yeon Sung, Jae-Heon Shin, Gun Yong Sung
Issue Date
2007-10
Citation
Applied Physics Letters, v.91, no.17, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2803071
Project Code
06ZB1200, Future Technology Researches in the Fields of Informations and Telecommunications, Taehyoung Zyung
Abstract
The ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals is investigated using the variable stripe length geometry with 200 femtosecond pump pulses. We find that the luminescence lifetimes are in the nanosecond range throughout the entire spectral range. However, no evidence for optical gain is observed even when the pump fluence is in excess of 40 mJ cm2. A comparison with similarly prepared, oxide-passivated silicon nanocrystals suggests that oxide passivation plays an important role in providing optical gain from silicon nanocrystals. © 2007 American Institute of Physics.
KSP Keywords
Luminescence lifetimes, Optical Gain, Oxide passivation, Silicon nanocrystals(Si NCs), Spectral range