상세정보
학술지
Ultrafast Photoluminescence Dynamics of Nitride-passivated Silicon Nanocrystals using the Variable Stripe Length Technique
- 발행일
- 200710
- 출처
- Applied Physics Letters, v.91 no.17, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 06ZB1200, 정보통신미래신기술연구사업, 정태형
- 초록
- The ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals is investigated using the variable stripe length geometry with 200 femtosecond pump pulses. We find that the luminescence lifetimes are in the nanosecond range throughout the entire spectral range. However, no evidence for optical gain is observed even when the pump fluence is in excess of 40 mJ cm2. A comparison with similarly prepared, oxide-passivated silicon nanocrystals suggests that oxide passivation plays an important role in providing optical gain from silicon nanocrystals. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Luminescence lifetimes, Optical Gain, Oxide passivation, Silicon nanocrystals(Si NCs), Spectral range