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Journal Article
Short Range Scattering Effect of InAs Quantum Dots in the Transport Properties of Two Dimensional Electron Gas
- Authors
- E. S. Kannan, Gil-Ho Kim, Sanjeev Kumar, I. Farrer, D. A. Ritchie, Jun Ho Son, Jeong Min Baik, Jong-Lam Lee, D. H. Youn, Kwang-Yong Kang
- Issue Date
- 2007-04
- Citation
- Applied Physics Letters, v.90, no.15, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG. © 2007 American Institute of Physics.
- KSP Keywords
- I-V characteristic(Transport property), InAs Quantum dots, Quantum Dot(QD), Quantum Well(QW), Scattering effect, Two-dimensional electron gas(2DEG), low carrier density, short-range, two-dimensional(2D)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
