상세정보
학술지
Short Range Scattering Effect of InAs Quantum Dots in the Transport Properties of Two Dimensional Electron Gas
- 발행일
- 200704
- 출처
- Applied Physics Letters, v.90 no.15, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 07MB1400, THz파 발진 변환 검출기 및 신호원, 강광용
- 초록
- Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG. © 2007 American Institute of Physics.
- KSP 제안 키워드
- I-V characteristic(Transport property), InAs Quantum dots, Quantum Dot(QD), Quantum Well(QW), Scattering effect, Two-dimensional electron gas(2DEG), low carrier density, short-range, two-dimensional(2D)