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Detail
Journal Article
3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
- Issue Date
- 2008-04
- Citation
- ETRI Journal, v.30, no.2, pp.308-314
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.
- KSP Keywords
- Electrical passivation, Layered metal, Leakage Current, Low-temperature polycrystalline silicon(LTPS), Mechanical stability, Metal gate, Organic layer, Organic light-emitting, Plastic substrate, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin film