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A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
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- Authors
- Chang-Geun Ahn, Tae-Youb Kim, Jong-Heon Yang, In-Bok Baek, Won-Ju Cho, Seong Jae Lee
- Issue Date
- 2008-02
- Citation
- Materials Science and Engineering B, v.147, no.2-3, pp.183-186
- ISSN
- 0921-5107
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nickel silicide (Ni2Si) formation, resulting in no in-diffusion of Ni into the channel. Next, the second step of the annealing process was performed at 500 °C for the formation of mono-nickel silicide (NiSi). Finally, the optimized Ni silicide SD with low resistance (5 廓/?뼞) and a low leakage current was achieved on the UTB. Using the proposed two-step silicide process, UTB RF MOSFET with a gate length of 50 nm a 20-nm UTB was successfully fabricated and showed the good RF properties with a cut-off frequency of 138 GHz. © 2007 Elsevier B.V. All rights reserved.
- KSP Keywords
- 38 GHz, In-diffusion, Low leakage current, Low resistance, Ni silicide formation, Nickel silicide, RF properties, SOI MOSFET, Second step, Two-step annealing process, Ultra-thin body