BROWSE
Detail
Journal Article
Configuration Specific Desorption by Scanning Tunneling Microscope in Organic-Semiconductor Hybrid Systems
Cited 5 time in 
Download 0 time
Share 
Download 0 time
Share
- Authors
- An Soon Kim, Sung-Soo Bae, Dae Sik Choi, Se Hun Kim
- Issue Date
- 2008-02
- Citation
- The Journal of Physical Chemistry C, v.112, no.5, pp.1493-1497
- ISSN
- 1932-7447
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Project Code
- 07MB2700, Ubiquitous Health Monitoring Module and System Development, Park Seon Hee
- Abstract
- Configuration-specific desorption of ethylene on a Ge(100) surface has been controlled at the nanoscale, induced using a scanning tunneling microscope (STM) tip at room temperature. Ethylene was found to adsorb in two distinct bonding geometries: (i) on top of a single Ge-Ge dimer (OT) and (ii) in a paired end-bridge between two neighboring Ge dimers within the same dimer row (PEB). Only OT configuration desorbs effectively at the sample bias voltages between -2.9 V and -3.1 V, tunneling current of 50 pA, and room temperature. The desorption yield for each configuration was measured as a function of sample bias voltages, where the voltage dependences of desorption yields show rapid increases between -2.9 V and -3.4 V for OT desorption, whereas between -3.2 V and -3.7 V, the PEB desorption increases rapidly. We have found that the applied sample bias voltages induce ?긄e-c hole-resonant inelastic tunneling, resulting in the dissociation of the Ge-C bonds. This selective, STM-induced desorption makes it possible to apply local control of surface reactions and to develop nanoscale lithography for molecular electronic devices. © 2008 American Chemical Society.
- KSP Keywords
- Desorption yield, Molecular electronic devices, Nanoscale lithography, Organic semiconductor, Room-temperature, Sample bias, Surface reaction, Tunneling current, bias voltage, hybrid systems, inelastic tunneling