상세정보
학술지
Configuration Specific Desorption by Scanning Tunneling Microscope in Organic-Semiconductor Hybrid Systems
- 저자
- 김안순, 배성수, 최대식, 김세훈
- 발행일
- 200802
- 출처
- The Journal of Physical Chemistry C, v.112 no.5, pp.1493-1497
- ISSN
- 1932-7447
- 출판사
- American Chemical Society(ACS)
- 협약과제
- 07MB2700, 유비쿼터스 건강관리용 모듈 시스템, 박선희
- 초록
- Configuration-specific desorption of ethylene on a Ge(100) surface has been controlled at the nanoscale, induced using a scanning tunneling microscope (STM) tip at room temperature. Ethylene was found to adsorb in two distinct bonding geometries: (i) on top of a single Ge-Ge dimer (OT) and (ii) in a paired end-bridge between two neighboring Ge dimers within the same dimer row (PEB). Only OT configuration desorbs effectively at the sample bias voltages between -2.9 V and -3.1 V, tunneling current of 50 pA, and room temperature. The desorption yield for each configuration was measured as a function of sample bias voltages, where the voltage dependences of desorption yields show rapid increases between -2.9 V and -3.4 V for OT desorption, whereas between -3.2 V and -3.7 V, the PEB desorption increases rapidly. We have found that the applied sample bias voltages induce ?긄e-c hole-resonant inelastic tunneling, resulting in the dissociation of the Ge-C bonds. This selective, STM-induced desorption makes it possible to apply local control of surface reactions and to develop nanoscale lithography for molecular electronic devices. © 2008 American Chemical Society.
- KSP 제안 키워드
- Desorption yield, Molecular electronic devices, Nanoscale lithography, Organic semiconductor, Room-temperature, Sample bias, Surface reaction, Tunneling current, bias voltage, hybrid systems, inelastic tunneling