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Conference Paper
Analytical Modeling of IGZO Thin Film Transistors Based on the Exponential Deep and Tail States
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- Authors
- Jae-Heon Shin, Chi-Sun Hwang, Woo-Seok Cheong, Sang-Hee Ko Park, Doo-Hee Cho, Minki Ryu, Sung-Min Yoon, Chun-Won Byun, Shin-Hyuk Yang, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2008-01
- Citation
- International Thin-Film Transistor Conference (ITC) 2008, pp.197-198
- Language
- English
- Type
- Conference Paper
- Project Code
- 07MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- We demonstrate that the curent-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are wel reproduced by using the proposed modeling scheme with the obtained parameters.
- KSP Keywords
- Analytical Modeling, IGZO thin film, In-Ga-Zn-O(IGZO), Initialization Vector(IV), Physical model, Thin-Film Transistor(TFT), field-effect mobility, model-based, tail states, thin film(TF), threshold voltage(Vth)