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학술대회
Analytical Modeling of IGZO Thin Film Transistors Based on the Exponential Deep and Tail States
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- 발행일
- 200801
- 출처
- International Thin-Film Transistor Conference (ITC) 2008, pp.197-198
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We demonstrate that the curent-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are wel reproduced by using the proposed modeling scheme with the obtained parameters.
- KSP 제안 키워드
- Analytical Modeling, IGZO thin film, In-Ga-Zn-O(IGZO), Initialization Vector(IV), Physical model, Thin-Film Transistor(TFT), field-effect mobility, model-based, tail states, thin film(TF), threshold voltage(Vth)