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Journal Article Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
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Authors
Jae Bon Koo, Kyung Soo Suh, In Kyu You, Seong Hyun Kim
Issue Date
2007-08
Citation
Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
Abstract
We fabricated pentacene organic thin-film transistors (OTFTs) with a dual-gate structure, in which 300-nm-thick thermally grown SiO 2 and 500-nm-thick parylene were used as a bottom-gate and a top-gate dielectric, respectively. The threshold voltage (V th ) of the dual-gate OTFT changed systematically with the application of voltage bias to the top-gate electrode. When voltage bias from À20 to 20 V was applied to the top-gate electrode, V th changed from 9.4 to À9:3 V. The range of V th shift in the dual-gate OTFT with a thin 10 nm pentacene layer was much wider than that with a thick 500 nm pentacene layer. This shift of V th due to the body effect allows the change from an enhancement-to a depletion-mode transistor, which is beneficial for the fabrication of organic circuits.
KSP Keywords
3 V, Bottom gate, Device characteristics, Dual-gate structure, Organic thin-film transistors (otfts), Pentacene layer, SiO 2, Thin-Film Transistor(TFT), body effect, depletion-mode, dual gate(DG)