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Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
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- Authors
- Jae Bon Koo, Kyung Soo Suh, In Kyu You, Seong Hyun Kim
- Issue Date
- 2007-08
- Citation
- Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated pentacene organic thin-film transistors (OTFTs) with a dual-gate structure, in which 300-nm-thick thermally grown SiO 2 and 500-nm-thick parylene were used as a bottom-gate and a top-gate dielectric, respectively. The threshold voltage (V th ) of the dual-gate OTFT changed systematically with the application of voltage bias to the top-gate electrode. When voltage bias from À20 to 20 V was applied to the top-gate electrode, V th changed from 9.4 to À9:3 V. The range of V th shift in the dual-gate OTFT with a thin 10 nm pentacene layer was much wider than that with a thick 500 nm pentacene layer. This shift of V th due to the body effect allows the change from an enhancement-to a depletion-mode transistor, which is beneficial for the fabrication of organic circuits.
- KSP Keywords
- 3 V, Bottom gate, Device characteristics, Dual-gate structure, Organic thin-film transistors (otfts), Pentacene layer, SiO 2, Thin-Film Transistor(TFT), body effect, depletion-mode, dual gate(DG)