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Detail
Journal Article
Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition
- Issue Date
- 2007-11
- Citation
- Electrochemical and Solid-State Letters, v.11 no.1, pp.H10-H14
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Project Code
- 07MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- Transparent ZnO thin film transistor (TFT) array of 176×144 (106 dpi) was fabricated on glass substrate. The Vth of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm2 V s. The active layer (ZnO), gate insulator (Al2 O3), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode. © 2007 The Electrochemical Society.