상세정보
학술지
Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition
- 발행일
- 200711
- 출처
- Electrochemical and Solid-State Letters, v.11 no.1, pp.H10-H14
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- Transparent ZnO thin film transistor (TFT) array of 176×144 (106 dpi) was fabricated on glass substrate. The Vth of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm2 V s. The active layer (ZnO), gate insulator (Al2 O3), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode. © 2007 The Electrochemical Society.
- KSP 제안 키워드
- Active Layer, Atomic Layer Deposition, Carrier density, Contact resistance(73.40.Cg), Etching process, Gate insulator, Glass substrate, Off Current, Source/drain electrodes, Thin-Film Transistor(TFT), Wet etching