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Journal Article
Fabrication of Oxide TFTs with Al2O3/ZnO Gate Stacks Patterned Using a Dry Etching Method
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- Issue Date
- 2007-12
- Citation
- Electrochemical and Solid-State Letters, v.11, no.2, pp.J15-J18
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Project Code
- 07MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- In this paper, we describe a newly developed dry etching process for the fabrication of ZnO-based oxide thin-film transistors (TFTs). The dry etching behavior of ZnO and Al2 O3 thin films was systematically investigated by varying the etching gas mixtures and their mixing ratios in a dry etching system using high-density helicon plasma. We fabricated an oxide TFT using an Al2 O3 /ZnO gate stack patterned by dry etching and confirmed good device characteristics, in which the field effect mobility and the ratio of on/off drain currents were about 0.8 cm2 / (V s) and 107, respectively. © 2007 The Electrochemical Society.
- KSP Keywords
- Device characteristics, Etching behavior, Etching method, Etching process, Gas mixture, Gate stack, High-density, Oxide TFTs, Thin-Film Transistor(TFT), dry etching, field-effect mobility