상세정보
학술지
Fabrication of Oxide TFTs with Al2O3/ZnO Gate Stacks Patterned Using a Dry Etching Method
- 발행일
- 200712
- 출처
- Electrochemical and Solid-State Letters, v.11 no.2, pp.J15-J18
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- In this paper, we describe a newly developed dry etching process for the fabrication of ZnO-based oxide thin-film transistors (TFTs). The dry etching behavior of ZnO and Al2 O3 thin films was systematically investigated by varying the etching gas mixtures and their mixing ratios in a dry etching system using high-density helicon plasma. We fabricated an oxide TFT using an Al2 O3 /ZnO gate stack patterned by dry etching and confirmed good device characteristics, in which the field effect mobility and the ratio of on/off drain currents were about 0.8 cm2 / (V s) and 107, respectively. © 2007 The Electrochemical Society.
- KSP 제안 키워드
- Device characteristics, Etching behavior, Etching method, Etching process, Gas mixture, Gate stack, High-density, Oxide TFTs, Thin-Film Transistor(TFT), dry etching, field-effect mobility