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Journal Article Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
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Authors
Woo-Seok Cheong, Sung Mook Chung, Jae-Hun Shin, Chi-Sun Hwang
Issue Date
2011-07
Citation
Journal of Crystal Growth, v.326, no.1, pp.186-190
ISSN
0022-0248
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.jcrysgro.2011.01.094
Project Code
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, Cheong Woo-Seok
Abstract
Using ZnO, and three compositional In2O3-Ga 2O3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. From the positive bias stress (PBS) tests, however, the electrical stability showed a complicated result, depending on both channel structures and post-heat treatments. © 2011 Elsevier B.V. All rights reserved.
KSP Keywords
Atomic ratio, Bias stress, Channel material, Channel structure, Double layered, Drain current, Electrical stability, Gate insulator, Gate oxide, Positive bias, Post-heat treatment