상세정보
학술지
Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
- 발행일
- 201107
- 출처
- Journal of Crystal Growth, v.326 no.1, pp.186-190
- ISSN
- 0022-0248
- 출판사
- Elsevier
- 협약과제
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- Using ZnO, and three compositional In2O3-Ga 2O3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. From the positive bias stress (PBS) tests, however, the electrical stability showed a complicated result, depending on both channel structures and post-heat treatments. © 2011 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Atomic ratio, Bias stress, Channel material, Channel structure, Double layered, Drain current, Electrical stability, Gate insulator, Gate oxide, Positive bias, Post-heat treatment