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Journal Article
Effect of Gas Mixing Ratio on Etch Behavior of ZrO2 Thin Films in BCl3/He Inductively Coupled Plasma
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- Authors
- Man Su Kim, Nam-Ki Min, Sun Jin Yun, Hyun Woo Lee, Alexander Efremov, Kwang-Ho Kwon
- Issue Date
- 2008-05
- Citation
- Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351
- ISSN
- 0734-2101
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Project Code
- 08MB3100, New electronic device using electric current jump, Hyun-Tak Kim
- Abstract
- This article reports a study carried out on a model-based analysis of the etch mechanism for Zr O2 thin films in a B Cl3 He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the Zr O2 etch rate, which changes from 36 to 57 nmmin for 0-83% He. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics were noticeably influenced by the initial composition of the B Cl3 He mixture, resulting in the nonmonotonic or nonlinear behaviors of species densities. Using the model-based analysis of etch kinetics, it was demonstrated that the behavior of the Zr O2 etch rate corresponds to the ion-flux-limited etch regime of the ion-assisted chemical reaction. © 2008 American Vacuum Society.
- KSP Keywords
- Etch mechanism, Etch rates, Gas Pressure, Gas mixing, Inductively-coupled plasma(ICP), Input power, Langmuir probe diagnostics, Mixing ratio, Model-based analysis, Nonlinear Behaviors, Plasma parameters