상세정보
학술지
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
- 발행일
- 200809
- 출처
- Thin Solid Films, v.516 no.22, pp.8159-5164
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have investigated transparent thin-film transistors (TTFTs) with active channel of zinc oxide (ZnO) films, reactively grown by RF magnetron sputtering using metallic zinc target. According to the ratio of oxygen to the total gas (O2/(O2 + Ar)), microstructures of the films changed drastically, and especially, ZnO films formed at 20% of O2 had good crystallinity with larger grains. ZnO films showed above 84% transparency in the wavelength range from 400혻nm to 750혻nm. Our bottom-gate ZnO-TTFTs showed n-type character with field-effect mobility of about 1.5혻cm2/Vs, an on/off ratio> 106, subthreshold swing of 1.1혻V/decade, and threshold voltage of 15.9혻V, after annealing at 250혻°C for 30혻min in O2 ambient. Crown Copyright © 2008.
- KSP 제안 키워드
- Active channel, Bottom gate, Good crystallinity, Metallic zinc, N-type, Oxide semiconductor, Reactive sputtering, Thin-Film Transistor(TFT), Zinc oxide(ZnO), ZnO films, field-effect mobility