BROWSE
Detail
Journal Article
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
Cited 12 time in 
Download 1 time
Share 
Download 1 time
Share
- Issue Date
- 2008-09
- Citation
- Thin Solid Films, v.516, no.22, pp.8159-5164
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 07MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- We have investigated transparent thin-film transistors (TTFTs) with active channel of zinc oxide (ZnO) films, reactively grown by RF magnetron sputtering using metallic zinc target. According to the ratio of oxygen to the total gas (O2/(O2 + Ar)), microstructures of the films changed drastically, and especially, ZnO films formed at 20% of O2 had good crystallinity with larger grains. ZnO films showed above 84% transparency in the wavelength range from 400혻nm to 750혻nm. Our bottom-gate ZnO-TTFTs showed n-type character with field-effect mobility of about 1.5혻cm2/Vs, an on/off ratio> 106, subthreshold swing of 1.1혻V/decade, and threshold voltage of 15.9혻V, after annealing at 250혻°C for 30혻min in O2 ambient. Crown Copyright © 2008.
- KSP Keywords
- Active channel, Bottom gate, Good crystallinity, Metallic zinc, N-type, Oxide semiconductor, Reactive sputtering, Thin-Film Transistor(TFT), Zinc oxide(ZnO), ZnO films, field-effect mobility