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Journal Article
Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current
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- Authors
- Bong Ki Mheen, Young-Joo Song, Albert J. P. Theuwissen
- Issue Date
- 2008-04
- Citation
- IEEE Electron Device Letters, v.29, no.4, pp.347-349
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result, using a commercial pixel in a 0.18 μm CMOS process, the voltage drop due to dark current of the pinned photodiode (PPD) is reduced by 6.1 dB and the well capacity is enhanced by 4.4 dB, which is attributed to the accumulated holes and the increased potential barrier near the PPD, respectively. © 2008 IEEE.
- KSP Keywords
- CMOS Process, CMOS image sensor, Dark Current, Pinned photodiode, Potential barrier, Voltage Drop, electrical method, image pixels, offset voltage