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Journal Article Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor
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Authors
Jae-Hong Jeon, Hee-Hwan Choe, Kang-Woong Lee, Jae-Heon Shin, Chi-Sun Hwang, Sang-Hee Ko Park, Jong-Hyun Seo
Issue Date
2008-07
Citation
Journal of the Korean Physical Society, v.53, no.1, pp.412-415
ISSN
0374-4884
Publisher
한국물리학회 (KPS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.53.412
Abstract
The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed.
KSP Keywords
Abnormal behavior, Electrical stability, Gate bias stress, Key factor, Possible mechanism, Stress test, Thin-Film Transistor(TFT), ZnO thin films, a-Si:H TFT, degradation mechanism, electrical characteristics