상세정보
학술지
Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor
- 발행일
- 200807
- 출처
- Journal of the Korean Physical Society, v.53 no.1, pp.412-415
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed.
- KSP 제안 키워드
- Abnormal behavior, Electrical stability, Gate bias stress, Key factor, Possible mechanism, Stress test, Thin-Film Transistor(TFT), ZnO thin films, a-Si:H TFT, degradation mechanism, electrical characteristics