BROWSE
Detail
Journal Article
Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor
Cited 8 time in 
Share 
Share
- Authors
- Jae-Hong Jeon, Hee-Hwan Choe, Kang-Woong Lee, Jae-Heon Shin, Chi-Sun Hwang, Sang-Hee Ko Park, Jong-Hyun Seo
- Issue Date
- 2008-07
- Citation
- Journal of the Korean Physical Society, v.53, no.1, pp.412-415
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed.
- KSP Keywords
- Abnormal behavior, Electrical stability, Gate bias stress, Key factor, Possible mechanism, Stress test, Thin-Film Transistor(TFT), ZnO thin films, a-Si:H TFT, degradation mechanism, electrical characteristics