상세정보
학술지
Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications
- 발행일
- 200804
- 출처
- IEEE Electron Device Letters, v.29 no.4, pp.331-333
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 07IB1700, 고신뢰성 charge complex 소재 탐색, 최성율
- 초록
- Resistive switching characteristics are investigated for Al/TiO??/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiO??/Al and bottom Al/TiO??/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiO?? interface side. © 2008 IEEE.
- KSP 제안 키워드
- Crossbar Structure, Hole structure, Space charges, Structural effects, Structure effect, Switching behavior, Switching mechanism, Via-hole, current model, edge effect(EE), resistive switching