BROWSE
Detail
Journal Article
Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications
Cited 97 time in 
Download 0 time
Share 
Download 0 time
Share
- Authors
- Lee-Eun Yu, Sung Ho Kim, Min-Ki Ryu, Sung-Yool Choi, Yang-Kyu Choi
- Issue Date
- 2008-04
- Citation
- IEEE Electron Device Letters, v.29, no.4, pp.331-333
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Project Code
- 07IB1700, 고신뢰성 charge complex 소재 탐색, Sung-Yool Choi
- Abstract
- Resistive switching characteristics are investigated for Al/TiO??/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiO??/Al and bottom Al/TiO??/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiO?? interface side. © 2008 IEEE.
- KSP Keywords
- Crossbar Structure, Hole structure, Space charges, Structural effects, Structure effect, Switching behavior, Switching mechanism, Via-hole, current model, edge effect(EE), resistive switching