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Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
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- Authors
- Sun Jin Yun, Jung Wook Lim, Byung-Gyu Chae, Bong Jun Kim, Hyun-Tak Kim
- Issue Date
- 2008-04
- Citation
- Physica B : Condensed Matter, v.403, no.5-9, pp.1381-1383
- ISSN
- 0921-4526
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Vanadium dioxide films were deposited using reactive RF-magnetron sputter deposition technique and characterized without or with post-annealing process for the application of thermal sensors. The film thickness variation on a 4-in wafer was less than 짹2%. As-deposited film showing an abrupt metal-insulator transition (MIT) could be obtained with O2 fraction of 6%. The films deposited at 400 and 450 °C showed abrupt changes of resistance in the order of 103 near typical MIT temperature of VO2 without post-annealing. The 110-nm-thick VO2 film deposited at 450 °C on c-sapphire revealed the resistance change of 1.2×104 near 68 °C after annealing at 510 °C. © 2007 Elsevier B.V. All rights reserved.
- KSP Keywords
- Abrupt change, As-deposited film, Post-annealing process, RF-magnetron sputter deposition, Resistance change, Sputter deposition technique, Thickness variation, Vanadium dioxide films, film thickness, metal-insulator transition, thermal sensors