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Journal Article Fabrication of Transmit–Receive Devices Monolithically Integrated with Semiconductor Optical Amplifier
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Authors
Su Hwan Oh, Yong-Soon Baek, Chul-Wook Lee, Ki Soo Kim, Kwang-Ryong Oh
Issue Date
2008-05
Citation
Japanese Journal of Applied Physics, v.47, no.5, pp.3489-3492
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1143/JJAP.47.3489
Abstract
Transmit-receive devices (TRD) monolithically integrated with a butt-coupled semiconductor optical amplifier (SOA) have been designed and fabricated using a buried ridge/ridge waveguide structure with low-threshold-current and high-temperature operation characteristics. The maximum output power was 31 mW under CW operation at 25°C. At 85°C the output power was over 9 mW with a side mode suppression of over 45 dB. The responsivity of the detector photodiode was over 0.6 A/W in the temperature range between 25 and 65°C and over 0.3 A/W at 85°C. It was nearly constant in the input-Dower range between -30 to -10 dBm. ©2008 The Japan Society of Applied Physics.
KSP Keywords
Applied physics, Coupled semiconductor, High temperature operation, Mode suppression, Operation characteristics, Semiconductor optical amplifiers(SOAs), Temperature range, Waveguide Structure, low threshold, maximum output power, monolithically integrated