상세정보
학술지
Fabrication of Transmit-Receive Devices Monolithically Integrated with Semiconductor Optical Amplifier
- 발행일
- 200805
- 출처
- Japanese Journal of Applied Physics, v.47 no.5, pp.3489-3492
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 07MB2400, 휴대 단말기용 나노 플렉스블 광전배선 모듈, 주정진
- 초록
- Transmit-receive devices (TRD) monolithically integrated with a butt-coupled semiconductor optical amplifier (SOA) have been designed and fabricated using a buried ridge/ridge waveguide structure with low-threshold-current and high-temperature operation characteristics. The maximum output power was 31 mW under CW operation at 25°C. At 85°C the output power was over 9 mW with a side mode suppression of over 45 dB. The responsivity of the detector photodiode was over 0.6 A/W in the temperature range between 25 and 65°C and over 0.3 A/W at 85°C. It was nearly constant in the input-Dower range between -30 to -10 dBm. ©2008 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Coupled semiconductor, High-temperature operation, Low threshold, Mode suppression, Operation characteristics, Ridge waveguides(RWs), Semiconductor optical amplifiers(SOAs), Temperature range, Waveguide Structure, maximum output power