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Journal Article
Fabrication of Transmit–Receive Devices Monolithically Integrated with Semiconductor Optical Amplifier
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- Authors
- Su Hwan Oh, Yong-Soon Baek, Chul-Wook Lee, Ki Soo Kim, Kwang-Ryong Oh
- Issue Date
- 2008-05
- Citation
- Japanese Journal of Applied Physics, v.47, no.5, pp.3489-3492
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Transmit-receive devices (TRD) monolithically integrated with a butt-coupled semiconductor optical amplifier (SOA) have been designed and fabricated using a buried ridge/ridge waveguide structure with low-threshold-current and high-temperature operation characteristics. The maximum output power was 31 mW under CW operation at 25°C. At 85°C the output power was over 9 mW with a side mode suppression of over 45 dB. The responsivity of the detector photodiode was over 0.6 A/W in the temperature range between 25 and 65°C and over 0.3 A/W at 85°C. It was nearly constant in the input-Dower range between -30 to -10 dBm. ©2008 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Coupled semiconductor, High temperature operation, Mode suppression, Operation characteristics, Semiconductor optical amplifiers(SOAs), Temperature range, Waveguide Structure, low threshold, maximum output power, monolithically integrated