상세정보
학술지
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
- 발행일
- 200805
- 출처
- Microelectronic Engineering, v.85 no.5-6, pp.1395-1398
- ISSN
- 0167-9317
- 출판사
- Elsevier
- 협약과제
- 07ZB1200, 정보통신미래신기술연구사업, 정태형
- 초록
- The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38 eV and 0.67 eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures. © 2007 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Current-voltage, High Temperature, Reverse bias, Schottky barrier height, Thermionic emission model, conduction mechanism, p-Type, schottky diode, temperature characteristics, temperature-independent