상세정보
학술지
Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition
- 발행일
- 200804
- 출처
- Japanese Journal of Applied Physics, v.47 no.4, pp.3067-3069
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- VO2 films showing abrupt metal-insulator transition (MIT) were fabricated on amorphous-film-coated Si wafers by reactive RF-magnetron sputter deposition using a V-metal target, and postdeposition annealing. The amorphous films were thermally grown SiO2 or Al2O3 films deposited by low-temperature plasma-enhanced atomic layer deposition. The effects of the underlayer and chamber pressure governing oxidation ambient on MIT characteristics were investigated. The MIT of VO2 films deposited at 5 mTorr on SiO2 and Al2O3 induced resistance changes of 1.3 × 104 and 2.3 × 103, respectively. The resistance change due to MIT was larger than 6.3 × 103 in an operating pressure range as wide as 5-25 mTorr on SiO 2. © 2008 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Amorphous films, Applied physics, Chamber pressure, Induced resistance, Low temperature(LT), Operating Pressure, Postdeposition annealing(PDA), Pressure range, RF-magnetron sputter deposition, Resistance change, Si substrate