상세정보
학술지
Effects of an Undoped Si1_xCx Buffer Layer on Performance of Si Nanocrystal Light-Emitting Diodes
- 발행일
- 200805
- 출처
- Electrochemical and Solid-State Letters, v.11 no.7, pp.H189-H192
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 07ZB1600, 유비쿼터스 라이프케어, 박선희
- 초록
- We report the effects of introducing an undoped Si1-x Cx buffer layer between a silicon nanocrystal (nc-Si) active layer and an n-type SiC layer on the performance of the nc-Si light-emitting diodes (LEDs). The electrical property of an nc-Si LED with a buffer layer was greatly improved compared to that of an nc-Si LED without a buffer layer. Moreover, the light output power of the nc-Si LED with a buffer layer was enhanced by a factor of 2. By employing a buffer layer, the efficiency of electron injection into the nc-Si layer was enhanced, which resulted in an increase in the light output power. The data show that the introduction of an undoped Si1-x Cx buffer layer is a very effective way to improve the performance of nc-Si LEDs. © 2008 The Electrochemical Society.
- KSP 제안 키워드
- Active Layer, Buffer layer, Light output power(Lop), Light-emitting diodes (leds), N-type, Nc-Si, Si LED, Si layer, Si nanocrystal, SiC layer, Silicon nanocrystals(Si NCs)