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Journal Article Effects of an Undoped Si1_xCx Buffer Layer on Performance of Si Nanocrystal Light-Emitting Diodes
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Authors
Chul Huh, Kwan Sik Cho, Kyung-Hyun Kim, Jong Cheol Hong, Hyun Sung Ko, Wan Joong Kim, Gun Yong Sung
Issue Date
2008-05
Citation
Electrochemical and Solid-State Letters, v.11, no.7, pp.H189-H192
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.2917568
Abstract
We report the effects of introducing an undoped Si1-x Cx buffer layer between a silicon nanocrystal (nc-Si) active layer and an n-type SiC layer on the performance of the nc-Si light-emitting diodes (LEDs). The electrical property of an nc-Si LED with a buffer layer was greatly improved compared to that of an nc-Si LED without a buffer layer. Moreover, the light output power of the nc-Si LED with a buffer layer was enhanced by a factor of 2. By employing a buffer layer, the efficiency of electron injection into the nc-Si layer was enhanced, which resulted in an increase in the light output power. The data show that the introduction of an undoped Si1-x Cx buffer layer is a very effective way to improve the performance of nc-Si LEDs. © 2008 The Electrochemical Society.
KSP Keywords
Active Layer, Buffer layer, Light output power(Lop), Light-emitting diodes (leds), N-type, Nc-Si, Si LED, Si layer, Si nanocrystal, SiC layer, Silicon nanocrystals(Si NCs)